Mechanisms of particle removal during brush scrubber cleaning

被引：0
|
作者：
Xu, K [1 ]
Vos, R [1 ]
Vereecke, G [1 ]
Mertens, PW [1 ]
Heyns, MM [1 ]
Vinckier, C [1 ]
Fransaer, J [1 ]
机构：
[1] IMEC, B-3001 Heverlee, Belgium
来源：
CLEANING TECHNOLOGY IN SEMICONDUCTOR DEVICE MANUFACTURING VIII | 2004年 / 2003卷 / 26期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The article focuses on the mechanisms of particle removal during brush scrubber cleaning for nano-sized slurry particles. The removal of Clariant SiO2 slurry particles with average size of 34nm from nitride substrates is investigated. To measure such nano-sized particles on wafers, the haze signal is used. After a scrubber clean, the uniformity of the particle radial surface concentration on a wafer is checked. The processing time effect on the particle removal is analysed afterwards. Based on rolling and lifting removal mechanisms, some initial models are developed to describe the particle radial surface concentration after scrubbing. By doing so, the removal mechanisms of scrubbing under varied scrubbing conditions are determined. Finally, some experimental evidences on the particle removal mechanisms are shown in this study.
引用
收藏
页码：137 / 144
页数：8
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