共 50 条
- [31] Evaluation of Novel Resist Materials for EUV Lithography ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXVI, 2009, 7273
- [32] Ablation of polymer film by excimer laser Yingyong Jiguang/Applied Laser Technology, 1992, 12 (06): : 241 - 244
- [34] Effect of resist polymer molecular weight on EUV lithography ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXVI, 2009, 7273
- [35] SULFONAMIDE-PHENOLIC RESIN NEGATIVE RESIST FOR KRF EXCIMER LASER LITHOGRAPHY JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (10): : 2126 - 2129
- [36] POSITIVE AND NEGATIVE CHEMICAL AMPLIFICATION RESIST SYSTEMS FOR KRF EXCIMER LASER LITHOGRAPHY ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1991, 201 : 30 - PMSE
- [37] Enhancement of process latitude by reducing resist thickness for KrF excimer laser lithography ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2, 1998, 3333 : 869 - 879
- [38] NEW NEGATIVE DEEP-UV RESIST FOR KRF EXCIMER LASER LITHOGRAPHY ACS SYMPOSIUM SERIES, 1989, 412 : 269 - 279
- [39] Sulfonamide-phenolic resin negative resist for KrF excimer laser lithography Yamaoka, Tsuguo, 1600, (28):
- [40] NEW NEGATIVE DEEP-UV RESIST FOR KRF EXCIMER LASER LITHOGRAPHY POLYMERS IN MICROLITHOGRAPHY: MATERIALS AND PROCESSES, 1989, 412 : 269 - 279