A new method to enhance frequency operation of CMOS ring oscillators

被引：6

作者：

El Mourabit, Aimad ^{[1
]}

Lu, Guo-Neng ^{[2
]}

Pittet, Patrick ^{[2
]}

Birjali, Youness ^{[1
]}

Lahjomri, Fouad ^{[1
]}

Zhang, Ming ^{[3
]}

机构：

[1] Univ Abdelmalek Essaadi, Natl Sch Appl Sci Tangier, LabTic, Tangier, Morocco

[2] Univ Lyon 1, CNRS UMR5270, INL, F-69365 Lyon 1, France

[3] Univ Paris 11, IEF, Orsay, France

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 2012年 / 99卷 / 03期

关键词：

RF and microwave electronics; CMOS ring oscillator; single-ended; differential oscillator;

D O I：

10.1080/00207217.2011.629214

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article proposes a frequency-boosting method for CMOS ring oscillators. It consists of adding RC-based differentiators in delay cells to speed up their transient responses. Two novel delay cells for simple and differential versions are presented. On using MOS transistor components to implement the differentiators, the resulting increase of surface area is observed to be moderate, and this allows frequency tuning by voltage control, without inducing additional phase noise. The presented circuits are suitable for low-voltage operation. Simulation results on the proposed circuits have shown significant frequency enhancement with a competitive factor of merit.

引用

页码：351 / 360

页数：10

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