Segmented grown Yb:KY(WO4)2/KY(WO4)2 for use in continuous-wave and mode-locked lasers

被引：4
|
作者：
Rivier, Simon
Petrov, Valentin
Gross, Andreas
Vernay, Sophie
Wesemann, Volker
Rytz, Daniel
Griebner, Uwe
机构：
[1] Max Born Inst, D-12489 Berlin, Germany
[2] FEE GmbH, D-55743 Idar Oberstein, Germany
来源：
OPTICS EXPRESS | 2007年 / 15卷 / 24期
关键词：
Semiconductor lasers;
D O I：
10.1364/OE.15.016279
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Segmented growth of monoclinic Yb:KY(WO4)(2) on KY(WO4)(2) substrates was successfully implemented and its excellent laser performance demonstrated. High slope efficiencies up to 80% and an output power of 375 mW were achieved under Ti:sapphire laser pumping in the continuous-wave regime. In the passively mode-locked regime, pulses as short as 99 fs with an average output power of 69 mW were obtained. (c) 2007 Optical Society of America.
引用
收藏
页码：16279 / 16284
页数：6
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