Ballistic electron emission microscopy studies of electron scattering in Au/GaAs Schottky diodes damaged by focused ion beam implantation

被引：1
|
作者：
McNabb, JW
Craighead, HG
机构：
[1] Sch. of Appl. and Eng. Physics, Cornell University, Ithaca
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 02期
关键词：
D O I：
10.1116/1.589146
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ballistic electron emission microscopy is used to investigate the electron scattering properties of undamaged and focused ion beam implanted Au/GaAs diodes. Implanted regions show decreased ballistic electron transmission attributed to increased scattering. A quantitative model of electron transport is developed that includes quantum mechanical transmission at the interface, scattering effects from optical phonons and implantation induced defects in the semiconductor, and scattering in the metal layer. Model predictions of scattering in undamaged regions show good agreement with the data. However, we conclude additional scattering effects must be included to describe the implanted structures. (C) 1996 American Vacuum Society.
引用
收藏
页码：617 / 622
页数：6
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