Transient analysis of n-tier GaAs MESFET matrix amplifiers by the TLM method

The performances of n-tier GaAs MESFET matrix amplifiers are studied in the time domain. The model is developed incorporating the parasitic resistive loss and internal coupling capacitance of the active device. Techniques are contemplated to transform the matrix amplifier into a set of coupled multi-conductor transmission lines. The resultant model is analysed by the TLM method. Impulse responses of 2 x 4 and 3 x 3 matrix amplifiers are investigated. The frequency responses of the amplifiers are obtained through a Fourier transform. Agreement is observed between results obtained by the TLM model and those obtained by other analytical methods or a complicated circuit analysis program. A 5 x 7 matrix amplifier is also analysed to show the advantage of the developed method.