Comparative SEU sensitivities to relativistic heavy ions

被引：26

作者：

Koga, R ^{[1
]}

Crain, SH ^{[1
]}

Crain, WR ^{[1
]}

Crawford, KB ^{[1
]}

Hansel, SJ ^{[1
]}

机构：

[1] Aerosp Corp, El Segundo, CA 90245 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1998年 / 45卷 / 06期

关键词：

D O I：

10.1109/23.736488

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SEU sensitivity of microcircuits to relativistic heavy ions is compared to that measured with low energy ions of comparable LET values. Multiple junction charge collection in a complex circuit seems to mask the effect of varying charge generations due to different ion track structures. Heavy ions at sub-relativistic speeds may generate nuclear fragments, sometimes resulting in SEUs.

引用

页码：2475 / 2482

页数：8

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