Comparative SEU sensitivities to relativistic heavy ions

被引:26
|
作者
Koga, R [1 ]
Crain, SH [1 ]
Crain, WR [1 ]
Crawford, KB [1 ]
Hansel, SJ [1 ]
机构
[1] Aerosp Corp, El Segundo, CA 90245 USA
关键词
D O I
10.1109/23.736488
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
SEU sensitivity of microcircuits to relativistic heavy ions is compared to that measured with low energy ions of comparable LET values. Multiple junction charge collection in a complex circuit seems to mask the effect of varying charge generations due to different ion track structures. Heavy ions at sub-relativistic speeds may generate nuclear fragments, sometimes resulting in SEUs.
引用
收藏
页码:2475 / 2482
页数:8
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