Magnetic properties and tunneling magnetoresistance in FeCo-SiO2 granular films

被引：2

作者：

Xi, L ^{[1
]}

Zhang, ZZ ^{[1
]}

Chi, JH ^{[1
]}

Li, CX ^{[1
]}

Ge, SH ^{[1
]}

机构：

[1] Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China

来源：

CHINESE SCIENCE BULLETIN | 2001年 / 46卷 / 09期

关键词：

tunneling magnetoresistance; granular films;

D O I：

10.1007/BF03187210

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Fe-fv(SiO2)(1-fv) granular films were fabricated by rf sputtering (f(v) represents the Fe volume fraction). The microstructure, magnetic properties as well as the tunneling magnetoresistance effect (TMR) were systematically studied. It was found that the maximum TMR ratio is about -3.3% at f(v) = 0.33. Under the same condition, a series of (Fe100-x Co-x)(0.33)(SiO2)(0.67) were prepared. TMR value reaches -4.5% at x = 53, while the microstructure of the film still keeps as that of Fe-0.33(SiO2)(0.67). The higher TMR ratio is contributed to the elevating of the spin polarization of particles. This is consistent with Inoue's theory.

引用

页码：734 / 737

页数：4

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