200 MeV Ag15+ ion induced surface modification and transport behaviour in manganite based thin film devices

被引:7
|
作者
Ravalia, Ashish [1 ]
Vagadia, Megha [1 ]
Vachhani, P. S. [1 ]
Choudhary, R. J. [2 ]
Phase, D. M. [2 ]
Asokan, K. [3 ]
Kuberkar, D. G. [1 ]
机构
[1] Saurashtra Univ, Dept Phys, Rajkot 360005, Gujarat, India
[2] UGC DAE CSR, Indore 452017, Madhya Pradesh, India
[3] Inter Univ, Accelerator Ctr, New Delhi 110067, India
关键词
SHI irradiation; Surface morphology; Manganite; Devices; MAGNETORESISTANCE;
D O I
10.1016/j.apsusc.2011.05.079
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report the effect of 200 MeV Ag15+ ion irradiation with fluence of similar to 5 x 10(11) ions/cm(2) on the structure and surface morphology of thin film devices of La0.6Pr0.2Sr0.2MnO3 (named as LPSMO) (p)/SrNb0.2Ti0.8O3 (named as SNTO) (n) manganite grown by Pulsed Laser Deposition (PLD) technique. The n-type manganite layers studied were of thickness 50, 100 and 200 nm. After ion irradiation, the structural studies revealed improved crystallinity in the LPSMO/SNTO devices with the thickness of 50 and 200 nm. But the 100 nm films showed the formation of regular tracks like feature in their surface morphology after irradiation. All the irradiated films show suppression of resistivity at all the temperatures but it was different rate in 100 nm LPSMO films which may be attributed to the formation of linear track like defects. (C) 2011 Elsevier B. V. All rights reserved.
引用
收藏
页码:4203 / 4206
页数:4
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