Direct Measurement of Potentials in the Reactive Ion-Plasma Etching System

被引:0
|
作者
Abramov, A., V [1 ]
机构
[1] Voronezh State Tech Univ, Voronezh 394006, Russia
关键词
probe diagnostics; low-temperature plasma; plasma potential; floating potential; PROBE;
D O I
10.1134/S1063780X22010019
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
Devices for direct measurement of the plasma potential and floating potential in the gas discharge in a reactive ion-plasma etching system are presented. The action of the devices developed for this purpose is based on the creation of a local magnetic field that makes it possible to purposefully change the conditions of ambipolar diffusion of charged particles. This allows the contact of the probe with the body of the positive plasma column without the appearance of floating potential on it. The results of measuring the plasma potential by the proposed and alternative methods are compared.
引用
收藏
页码:69 / 73
页数:5
相关论文
共 50 条
  • [21] PLASMA DIAGNOSTIC STUDIES FOR REACTIVE ION ETCHING SYSTEMS
    ALASSADI, KF
    CHATTERTON, PA
    REES, JA
    VACUUM, 1988, 38 (8-10) : 633 - 636
  • [22] Anisotropic Si reactive ion etching in fluorinated plasma
    Malinin, A.
    Majamaa, T.
    Hovinen, A.
    Microelectronic Engineering, 1998, 43-44 : 641 - 645
  • [23] REACTIVE ION ETCHING OF GAAS IN A MAGNETICALLY CONFINED PLASMA
    MANTEI, TD
    JBARA, JJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C310 - C310
  • [24] TRIODE TYPE REACTIVE ION ETCHING SYSTEM
    SHIBAYAMA, H
    OGAWA, T
    KOBAYASHI, K
    KOSUGI, M
    HISATSUGU, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C108 - C108
  • [25] Composition of ion-plasma coatings
    Guchenko, S. A.
    Laurinas, V. Ch.
    Zavatskaya, O. N.
    BULLETIN OF THE UNIVERSITY OF KARAGANDA-PHYSICS, 2014, 3 (75): : 16 - 27
  • [26] COMPARISON OF DAMAGE IN THE DRY ETCHING OF GAAS BY CONVENTIONAL REACTIVE ION ETCHING AND BY REACTIVE ION ETCHING WITH AN ELECTRON-CYCLOTRON RESONANCE GENERATED PLASMA
    CHEUNG, R
    LEE, YH
    LEE, KY
    SMITH, TP
    KERN, DP
    BEAUMONT, SP
    WILKINSON, CDW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1462 - 1466
  • [27] Evaluation of Area Scaling of the Reactive Ion-plasma Etched Astronomical Diffraction Gratings
    Lee, Hanshin
    Subash, Uma
    Poutous, Menelaos K.
    ADVANCES IN OPTICAL AND MECHANICAL TECHNOLOGIES FOR TELESCOPES AND INSTRUMENTATION VI, 2024, 13100
  • [28] GAAS TAPER ETCHING BY MIXTURE GAS REACTIVE ION ETCHING SYSTEM
    HIRANO, M
    ASAI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (12B): : L2136 - L2138
  • [29] ION-PLASMA OSCILLATIONS EXCITED IN AN ION SHEATH
    YAMAGIWA, K
    KATO, K
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1970, 29 (05) : 1398 - &
  • [30] REACTIVE ION ETCHING
    ZIELINSKI, L
    SCHWARTZ, GC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : C71 - C71