The Frequency Dependence Features of Si Whiskers Conductance in Low-Temperature Range

被引：0
|
作者：
Druzhinin, Anatoly [1 ,2 ]
Osrtovskii, Igor [1 ,2 ]
Khoverko, Yuriy [1 ,2 ]
Koretskii, Roman [1 ]
Yatsukhnenko, Serhii [1 ]
机构：
[1] Lviv Polytech Natl Univ, S Bandery Str,12, UA-79013 Lvov, Ukraine
[2] Int Lab High Magnet Fields & Low Temperatur, Ul Gajowicka 95, Wroclaw, Poland
来源：
2016 13TH INTERNATIONAL CONFERENCE ON MODERN PROBLEMS OF RADIO ENGINEERING, TELECOMMUNICATIONS AND COMPUTER SCIENCE (TCSET) | 2016年
关键词：
Whiskers; Frequency; Cryogenic temperature; DISORDERED-SYSTEMS; CONDUCTIVITY;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
was observed frequency dependence of active resistance of silicon nanowires in the vicinity to met from the dielectric side of metal-insulator transition. The characteristic data in wide temperature range has been analysed for processing information about specific mechanism charge carriers displacement at low frequency and it is in good arrangement with theory.
引用
收藏
页码：364 / 367
页数：4
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