Gate substrate effect on RF CMOS device noise

被引：3
|
作者：
Xiong, Y. -Z. [1 ]
Shi, J. [1 ]
Lan, N. [1 ]
Lin, F. [1 ]
机构：
[1] Inst Microelect, Singapore 117865, Singapore
来源：
ELECTRONICS LETTERS | 2007年 / 43卷 / 24期
关键词：
D O I：
10.1049/el:20072255
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The gate substrate effect on RF CMOS device noise is investigated. The gate substrate resistance (R-gb) noise contribution to the total RF device minimum noise figures (NFmin) is obtained. The results show that the gate substrate resistance noise is considerable in a certain frequency range for 90 nm CMOS devices.
引用
收藏
页码：1389 / 1390
页数：2
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