Non-volatile memory device using a polymer modified nanocrystal

被引：1

作者：

Kiazadeh, A. ^{[1
]}

Gomes, H. L. ^{[1
]}

Rosa da Costa, A. M. ^{[2
]}

Moreira, J. A. ^{[2
]}

de Leeuw, D. M. ^{[3
]}

Meskers, S. C. J. ^{[4
]}

机构：

[1] Univ Algarve, CEOT, P-8000139 Faro, Portugal

[2] Univ Algarve, Ctr Invest Quim Algarve, P-8000139 Faro, Portugal

[3] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

[4] Eindhoven Univ Technol, NL-5600 MB Eindhoven, Netherlands

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2011年 / 176卷 / 19期

关键词：

Nanocrystals; Resistive switching; Non-volatile memories; THIN INSULATING FILMS;

D O I：

10.1016/j.mseb.2011.01.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin-film planar structures using AgCl nanocrystals embedded in a polymer blend; exhibit reliable and reproducible switching between different non-volatile conductance states. It is shown that resistive switching in these systems cannot be related with migration diffusion or aggregation of metals to form metallic filaments. This is supported by temperature-dependent measurement showing that the current in the high conductance state is thermal activated (0.6 eV). (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1552 / 1555

页数：4

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