Update of the development progress of the High Power LPP-EUV light source using a magnetic field

被引:1
|
作者
Takashima, Yuta [1 ]
Ueno, Yoshifumi [1 ]
Yabu, Takayuki [1 ]
Hori, Tsukasa [1 ]
Soumagne, Georg [1 ]
Nagai, Shinji [1 ]
Yanagida, Tatsuya [1 ]
Shiraishi, Yutaka [1 ]
Miyao, Kenichi [1 ]
Hayashi, Hideyuki [1 ]
Watanabe, Yukio [1 ]
Abe, Tamotsu [1 ]
Nakarai, Hiroaki [1 ]
Saito, Takashi [1 ]
Mizoguchi, Hakaru [1 ]
机构
[1] Gigaphoton Inc, 3-25-1 Shinomiya, Hiratsuka, Kanagawa 2548555, Japan
关键词
EUV light source; EUV lithography; Laser produced plasma; Debris mitigation; Magnetic field; Tin droplet target; CO2; laser; Pre-pulse laser;
D O I
10.1117/12.2536397
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Gigaphoton Inc. has been developing a CO2-Sn-LPP (LPP: Laser Produced Plasma) extreme ultraviolet (EUV) light source system for high-volume manufacturing (HVM) semiconductor lithography. Key components of the source include a high-power CO2 laser with 15 ns pulse duration and 100 kHz repetition frequency, a solid-state pre-pulse laser with 10 ps pulse duration and a magnetic field debris mitigation system. To achieve 330 W with long collector mirror lifetime and stable output, we improved the performance of key system components; especially, the laser beam quality at 26 kW CO2 laser output power by upgrading the CO2 laser beam transfer system, the conversion efficiency (CE) by the optimization of plasma-related parameters to now 6 %, the dose stability and suppression of small Tin (Sn) debris by upgrading the shooting control system, the collector mirror degradation rate by the optimization of H-2 flow condition and changes in the EUV chamber structure. This paper presents the key technology update of our EUV light source.
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页数:13
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