Fabrication of InN/Si heterojunctions with rectifying characteristics

被引：10
|
作者：
Yoshimoto, M [1 ]
Yamamoto, Y [1 ]
Saraie, J [1 ]
机构：
[1] Kyoto Inst Technol, Dept Elect & Informat Sci, Kyoto 6068585, Japan
来源：
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期
关键词：
D O I：
10.1002/pssc.200303423
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
InN/Si heterojunctions consisting of InN with an oxygen concentration of similar to3% and a bandgap of 1.8 similar to 2.0 eV were formed by MBE. The band alignment of the heterojunctions turned out be type 11 with a band discontinuity of 1.49 similar to 1.60 eV. A SiN, intermediate layer with a thickness of 2.1 nm was observed by angle-resolved X-ray photoemission spectroscopy. The heterojunction showed good rectifying characteristics with a reverse current of 1 X 10(-7) A/cm(2). Separation of the InN/Si interface and the p-n interface by insertion of n-Si layer with a thickness of 200 nm resulted in a reduction of the reverse current in the heterojunction. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA. Weinheim.
引用
收藏
页码：2794 / 2797
页数：4
相关论文
共 50 条
  • [41] Natural band alignments of InN/GaN/AlN nanorod heterojunctions
    Kuo, Cheng-Tai
    Chang, Kai-Kuen
    Shiu, Hung-Wei
    Liu, Chia-Rong
    Chang, Lo-Yueh
    Chen, Chia-Hao
    Gwo, Shangjr
    APPLIED PHYSICS LETTERS, 2011, 99 (12)
  • [42] Towards fabrication of In-polar InN films and InN/GaN MQWs
    Yamaguchi, Wataru
    Che, Song-Bek
    Kikukawa, Naohiro
    Ishitani, Yoshihiro
    Yoshikawa, Akihiko
    Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6, 2006, 3 (06): : 1511 - 1514
  • [43] Control of electron density in InN by Si doping and optical properties of Si-doped InN
    Higashiwaki, M
    Inushima, T
    Matsui, T
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 240 (02): : 417 - 420
  • [44] (S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN
    Jimenez, J. J.
    Manuel, J. M.
    Aseev, P.
    Soto Rodriguez, P. E. D.
    Notzel, R.
    Gacevic, Z.
    Calleja, E.
    Garcia, R.
    Morales, F. M.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 783 : 697 - 708
  • [45] Fabrication and Characterization of AlN/InN Heterostructures
    Fujii, Tomoaki
    Shimomoto, Kazuma
    Ohba, Remi
    Toyoshima, Yasushi
    Horiba, Koji
    Ohta, Jitsuo
    Fujioka, Hiroshi
    Oshima, Masaharu
    Ueda, Shigenori
    Yoshikawa, Hideki
    Kobayashi, Keisuke
    APPLIED PHYSICS EXPRESS, 2009, 2 (01) : 0110021 - 0110023
  • [46] Rectifying Characteristics of Boron Doped Si Microneedle Grown by In-Situ Doping VLS
    Islam, Md. Shofiqul
    Hasan, Kamrul
    2012 INTERNATIONAL CONFERENCE ON INFORMATICS, ELECTRONICS & VISION (ICIEV), 2012, : 790 - 794
  • [47] Morphological, optical and photovoltaic characteristics of MoSe2/SiOx/Si heterojunctions
    Silva, J. P. B.
    Almeida Marques, C.
    Viana, A. S.
    Santos, L. F.
    Gwozdz, K.
    Popko, E.
    Connolly, J. P.
    Veltruska, K.
    Matolin, V
    Conde, O.
    SCIENTIFIC REPORTS, 2020, 10 (01)
  • [48] Morphological, optical and photovoltaic characteristics of MoSe2/SiOx/Si heterojunctions
    J. P. B. Silva
    C. Almeida Marques
    A. S. Viana
    L. F. Santos
    K. Gwozdz
    E. Popko
    J. P. Connolly
    K. Veltruská
    V. Matolín
    O. Conde
    Scientific Reports, 10
  • [49] Fabrication of novel pyramid-textured and nanostructured Cu2O/Si heterojunctions
    Ma, Ji
    Wang, Zhiwei
    Qi, Hao
    Pan, Peng
    Lang, Xianzhong
    He, Zuming
    Tang, Bin
    Su, Jiangbin
    SURFACE INNOVATIONS, 2021, 9 (04) : 199 - 206
  • [50] THE IV CHARACTERISTICS OF THE GAS-PHASE DOPED COPPER PHTHALOCYANINE/SI HETEROJUNCTIONS
    PARK, C
    NAM, HW
    OVCHINNIKOV, AA
    PARK, YW
    SYNTHETIC METALS, 1993, 57 (01) : 4065 - 4070
12345