Fabrication of InN/Si heterojunctions with rectifying characteristics

被引：10
|
作者：
Yoshimoto, M [1 ]
Yamamoto, Y [1 ]
Saraie, J [1 ]
机构：
[1] Kyoto Inst Technol, Dept Elect & Informat Sci, Kyoto 6068585, Japan
来源：
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期
关键词：
D O I：
10.1002/pssc.200303423
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
InN/Si heterojunctions consisting of InN with an oxygen concentration of similar to3% and a bandgap of 1.8 similar to 2.0 eV were formed by MBE. The band alignment of the heterojunctions turned out be type 11 with a band discontinuity of 1.49 similar to 1.60 eV. A SiN, intermediate layer with a thickness of 2.1 nm was observed by angle-resolved X-ray photoemission spectroscopy. The heterojunction showed good rectifying characteristics with a reverse current of 1 X 10(-7) A/cm(2). Separation of the InN/Si interface and the p-n interface by insertion of n-Si layer with a thickness of 200 nm resulted in a reduction of the reverse current in the heterojunction. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA. Weinheim.
引用
收藏
页码：2794 / 2797
页数：4
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