共 28 条
- [23] A novel body effect reduction technique to recessed channel transistor featuring partially insulating layer under source and drain: Application to sub-50nm DRAM cell 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, : 903 - +
- [25] Self-aligned Metallic Source and Drain Fin-on-Insulator FinFETs with Excellent Short Channel Effects Immunity down to 20 nm Gate Length 2018 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC), 2018,
- [27] Analysis of short-channel Schottky source/drain metal-oxide-semiconductor field-effect transistor on silicon-on-insulator substrate and demonstration of sub-50-nm n-type devices with metal gate JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (11): : 6226 - 6231
- [28] Analysis of short-channel Schottky source/drain metal-oxide-semiconductor field-effect transistor on silicon-on-insulator substrate and demonstration of sub-50-nm n-type devices with metal gate Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (11): : 6226 - 6231