Hardness of hafnium carbide films deposited on silicon by pulsed laser ablation

被引：13
|
作者：
Barinov, SM
Ferro, D
Bartuli, C
D'Alessio, L
机构：
[1] Russian Acad Sci, Inst Phys Chem Ceram, Moscow 119361, Russia
[2] CNR, Ctr Termodinam Chim Alte Temp, I-00185 Rome, Italy
[3] Univ Roma La Sapienza, I-00185 Rome, Italy
[4] Univ Basilicata, I-85100 Potenza, Italy
来源：
JOURNAL OF MATERIALS SCIENCE LETTERS | 2001年 / 20卷 / 16期
关键词：
D O I：
10.1023/A:1017970212233
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Hardness of hafnium carbide films deposited on silicon by pulsed laser ablation was investigated. The films were deposited on polished silicon (100) substrates using a pulsed laser ablation deposition (PLAD) apparatus. Hardness of HfC was found to be lower than that of TiC. This was attributed to the difference in the density of electron states at the fermi surface in TiC and HfC.
引用
收藏
页码：1485 / 1487
页数：3
相关论文
共 50 条
  • [31] Crystallization of silicon carbide thin films by pulsed laser irradiation
    DeCesare, G
    LaMonica, S
    Maiello, G
    Masini, G
    Proverbio, E
    Ferrari, A
    Chitica, N
    Dinescu, M
    Alexandrescu, R
    Morjan, I
    Rotiu, E
    APPLIED SURFACE SCIENCE, 1996, 106 : 193 - 197
  • [32] Crystallization of silicon carbide thin films by pulsed laser irradiation
    Univ of Rome `La Sapienza', Rome, Italy
    Appl Surf Sci, (193-197):
  • [33] Incorporation of fluorine in hydrogenated silicon carbide films deposited by pulsed glow discharge
    Jacobsohn, LG
    Afanasyev-Charkin, IV
    Cooke, DW
    Schulze, RK
    Averitt, RD
    Nastasi, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (04): : 1223 - 1228
  • [34] Carbon nitride films deposited by reactive sputtering and pulsed laser ablation
    Yasui, T
    Kotani, T
    Fujiuchi, K
    Tahara, H
    Yoshikawa, T
    THIN SOLID FILMS, 2004, 457 (01) : 133 - 138
  • [35] Investigations of ZnO thin films deposited by a reactive pulsed laser ablation
    Cui, J. B.
    Soo, Y. C.
    Kandel, H.
    Thomas, M. A.
    Chen, T. P.
    Daghlian, C. P.
    SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2009, 52 (01): : 99 - 103
  • [36] Spectroscopic characterisation of DLC films deposited on polycarbonate by pulsed laser ablation
    Bonelli, M
    Casiraghi, C
    Miotello, A
    Mosaner, P
    Ossi, PM
    SURFACE & COATINGS TECHNOLOGY, 2002, 151 : 303 - 307
  • [37] Thermal stability of amorphous carbon films deposited by pulsed laser ablation
    Rey, S
    Antoni, F
    Prevot, B
    Fogarassy, E
    Arnault, JC
    Hommet, J
    Le Normand, F
    Boher, P
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2000, 71 (04): : 433 - 439
  • [38] Thin films of Fe-V deposited by pulsed laser ablation
    DAlessio, L
    Teghil, R
    Santagata, A
    Marotta, V
    Ferro, D
    DeMaria, G
    SURFACE & COATINGS TECHNOLOGY, 1996, 80 (1-2): : 221 - 223
  • [39] Al-Sn thin films deposited by pulsed laser ablation
    Perrone, A
    Zocco, A
    de Rosa, H
    Zimmermann, R
    Bersani, M
    MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2002, 22 (02): : 465 - 468
  • [40] Investigations of ZnO thin films deposited by a reactive pulsed laser ablation
    J. B. Cui
    Y. C. Soo
    H. Kandel
    M. A. Thomas
    T. P. Chen
    C. P. Daghlian
    Science in China Series E: Technological Sciences, 2009, 52 : 99 - 103
12345