Hardness of hafnium carbide films deposited on silicon by pulsed laser ablation

被引：13
|
作者：
Barinov, SM
Ferro, D
Bartuli, C
D'Alessio, L
机构：
[1] Russian Acad Sci, Inst Phys Chem Ceram, Moscow 119361, Russia
[2] CNR, Ctr Termodinam Chim Alte Temp, I-00185 Rome, Italy
[3] Univ Roma La Sapienza, I-00185 Rome, Italy
[4] Univ Basilicata, I-85100 Potenza, Italy
来源：
JOURNAL OF MATERIALS SCIENCE LETTERS | 2001年 / 20卷 / 16期
关键词：
D O I：
10.1023/A:1017970212233
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Hardness of hafnium carbide films deposited on silicon by pulsed laser ablation was investigated. The films were deposited on polished silicon (100) substrates using a pulsed laser ablation deposition (PLAD) apparatus. Hardness of HfC was found to be lower than that of TiC. This was attributed to the difference in the density of electron states at the fermi surface in TiC and HfC.
引用
收藏
页码：1485 / 1487
页数：3
相关论文
共 50 条
  • [1] Hardness of titanium carbide films deposited on silicon by pulsed laser ablation
    De Maria, G
    Ferro, D
    D'Alessio, L
    Teghil, R
    Barinov, SM
    JOURNAL OF MATERIALS SCIENCE, 2001, 36 (04) : 929 - 935
  • [2] Hardness of titanium carbide films deposited on silicon by pulsed laser ablation
    G. De Maria
    D. Ferro
    L. D'Alessio
    R. Teghil
    S. M. Barinov
    Journal of Materials Science, 2001, 36 : 929 - 935
  • [3] Raman microscopy study of pulsed laser ablation deposited silicon carbide films
    Neri, F
    Trusso, S
    Vasi, C
    Barreca, F
    Valisa, P
    THIN SOLID FILMS, 1998, 332 (1-2) : 290 - 294
  • [4] Zirconium carbide thin films deposited by pulsed laser ablation
    D'Alessio, L
    Santagata, A
    Teghil, R
    Zaccagnino, M
    Zaccardo, I
    Marotta, V
    Ferro, D
    De Maria, G
    APPLIED SURFACE SCIENCE, 2000, 168 (1-4) : 284 - 287
  • [5] Thin films deposited by femtosecond pulsed laser ablation of tungsten carbide
    De Bonis, A.
    Teghil, R.
    Santagata, A.
    Galasso, A.
    Rau, J. V.
    APPLIED SURFACE SCIENCE, 2012, 258 (23) : 9198 - 9201
  • [6] Thermal annealing effects on the optical properties of amorphous silicon carbide films deposited by pulsed laser ablation
    Yu, W
    Lu, WB
    Zhang, L
    Sun, YT
    Fu, GS
    ICO20: MATERIALS AND NANOSTRUCTURES, 2006, 6029
  • [7] Optical Analysis of Germanium Carbide Thin Films Deposited by Reactive Pulsed Laser Ablation
    Mahmood, A.
    Iqbal, M.
    Ali, Zahid
    Shafi, H. Z.
    Shah, A.
    Batani, D.
    JOURNAL OF LASER MICRO NANOENGINEERING, 2010, 5 (03): : 204 - 208
  • [8] Growth and structural properties of hydrogenated silicon films deposited by pulsed laser ablation
    Trusso, S
    Vasi, C
    Neri, F
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (03): : 921 - 925
  • [9] Photoexcitation in thin films deposited on silicon substrates by reactive pulsed laser ablation
    Giardini Guidoni, A.
    Marotta, V.
    Orlando, S.
    Parisi, G.P.
    International Journal of Photoenergy, 2002, 3 (04) : 213 - 216
  • [10] Photoexcitation in thin films deposited on silicon substrates by reactive pulsed laser ablation
    Guidoni, A. Giardini
    Marotta, V.
    Orlando, S.
    Parisi, G. P.
    INTERNATIONAL JOURNAL OF PHOTOENERGY, 2001, 3
12345