Capacitor-less memory: advances and challenges

被引：0

作者：

Gamiz, Francisco ^{[1
]}

机构：

[1] Univ Granada, CITIC UGR, Nanoelect Res Grp, E-18071 Granada, Spain

来源：

2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2016) | 2016年

关键词：

semiconductor memory; Internet-of-Things; floating-body DRAM; low-power; 1T-DRAM;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Several types of floating-body capacitorless 1T-DRAM memory cells are reviewed and compared. We focus on the recently proposed concepts (MSDRAM, A2RAM and Z2FET), by addressing the device architecture and fabrication, operating mechanisms, and scaling issues. Experimental results together with numerical simulations indicate the directions for performance optimization, and their implementation in FDSOI 28nm (FD28) and FDSOI 14nm (FD14) technological nodes. These memory cells are the basis for the recently started European Project REMINDER "Revolutionary Embedded Memory for INternet of Things Devices and Energy Reduction". REMINDER aims to develop an embedded DRAM solution optimized for ultra-low-power consumption and variability immunity, specifically focused on Internet of Things (IoT) cutedge devices.

引用

页码：68 / 71

页数：4

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