Performance of a polymer light-emitting diode with enhanced charge carrier mobility

被引：16
|
作者：
Blom, PWM
Martens, HCF
Schoo, HEM
Vissenberg, MCJM
Huiberts, JN
机构：
[1] Univ Groningen, Ctr Mat Sci, NL-9747 AG Groningen, Netherlands
[2] Leiden Univ, Kamerlingh Onnes Lab, NL-2300 RA Leiden, Netherlands
[3] TNO, Ind Technol Inst, NL-5600 MB Eindhoven, Netherlands
[4] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
来源：
SYNTHETIC METALS | 2001年 / 122卷 / 01期
关键词：
polymer light-emitting diode; charge carrier mobility; quantum efficiency;
D O I：
10.1016/S0379-6779(00)01340-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The device characteristics of a polymer light-emitting diode (PLED) based on a poly(p-phenylene vinylene) (PPV) derivative with an enhanced charge carrier mobility have been :investigated. Improvement of the mobility, which has been obtained by a decrease of the energetic disorder in the polymer, is expected to increase the power efficiency of a PLED. However, it is demonstrated that an increased mobility leads to a decrease as well as to a slower rise of the quantum efficiency with voltage. This performance reduction is explained in terms of an increased quenching of the electroluminescence (EL) at the cathode. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：95 / 98
页数：4
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