Photoelectron spectra of Al dopants in 4H-SiC

被引：0

作者：

Schmeisser, D

Irmscher, K

Wagner, G

机构：

[1] Brandenburg Tech Univ Cottbus, Angew Phys Sensor, D-03013 Cottbus, Germany

[2] Inst Kristallzuchtung, D-12489 Berlin, Germany

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2003年 / 102卷 / 1-3期

关键词：

photoelectron; spectra; 4H-SiC;

D O I：

10.1016/S0921-5107(02)00721-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on a photoelectron spectroscopy study of Al-dopants in 4H-SiC epitaxial layers. For silicon carbide (SiC) samples with an Al concentration of 10(20) cm(-3) we have been able to detect the Al2p photoemission signal. The Al2p signal is recorded through the oxide layer with a thickness of about 0.4 nm. We identify the emission signal of dopants and of small clusters. The latter become oxidized by diffusion of oxygen through the native oxide. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：284 / 288

页数：5

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