Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications

被引：0
|
作者：
Nallet, F [1 ]
Sénès, A [1 ]
Planson, D [1 ]
Locatelli, ML [1 ]
Chante, JP [1 ]
Taboy, JP [1 ]
机构：
[1] INSA Lyon, Ctr Genie Elect Lyon, CEGELY, UMR 5005, F-69621 Villeurbanne, France
来源：
IPEMC 2000: THIRD INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE, VOLS 1-3, PROCEEDINGS | 2000年
关键词：
SiC; current limiting device; serial protection; temperature; 2D finite element simulation;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The subject of this paper is a study of the ability of silicon carbide to be used for new solid state power device applications. By the way, a 4H-SiC current limiting device is studied. The device structure is a vertical power Mosfet like with a preformed N channel. Its electrothermal behavior is presented through simulations with ISE TCAD tools. The efficiency of such silicon device is estimated for comparison with SiC. A full simulation with two SiC devices inside a HSPICE modeled circuit is also proposed to study the ability of a bi-directional serial protection system.
引用
收藏
页码：396 / 401
页数：6
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