Improvement of Plasma Resistance of Anodic Aluminum-Oxide Film in Sulfuric Acid Containing Cerium(IV) Ion

被引：10

作者：

So, Jongho ^{[1
,2
]}

Choi, Eunmi ^{[2
]}

Kim, Jin-Tae ^{[2
]}

Shin, Jae-Soo ^{[3
]}

Song, Je-Boem ^{[2
]}

Kim, Minjoong ^{[1
,2
]}

Chung, Chin-Wook ^{[1
]}

Yun, Ju-Young ^{[2
,4
]}

机构：

[1] Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea

[2] Korea Res Inst Stand & Sci, Ctr Mat & Energy Measurement, Daejeon 34113, South Korea

[3] Daejeon Univ, Dept Adv Mat Engn, Daejeon 34520, South Korea

[4] Univ Sci & Technol, Div Nano & Informat Technol, Daejeon 34113, South Korea

来源：

COATINGS | 2020年 / 10卷 / 02期

关键词：

plasma corrosion; plasma etch rate; anodic aluminum oxide; cerium(IV); CORROSION-RESISTANCE; AL2O3; FILMS; SPECTROSCOPY; ANODIZATION; ELECTROLYTE; REDUCTION; STABILITY; CERAMICS; BEHAVIOR; DENSITY;

D O I：

10.3390/coatings10020103

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The parts of equipment in a process chamber for semiconductors are protected with an anodic aluminum-oxide (AAO) film to prevent plasma corrosion. We added cerium(IV) ions to sulfuric acid in the anodizing of an AAO film to improve the plasma corrosion resistance, and confirmed that the AAO film thickness increased by up to similar to 20% when using 3 mM cerium(IV) ions compared with general anodizing. The alpha-Al2O3 phase increased with increasing cerium(IV) ion concentration. The breakdown voltage and etching rate improved to similar to 35% and 40%, respectively. The film's performance regarding the generation of contamination particles reduced by similar to 50%.

引用

页数：10

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