1/f noise and RTS(random telegraph signal) errors in sense amplifiers

被引：0
|
作者：
Miller, Drake A. [1 ]
Poocharoen, Panupat [1 ]
Forbes, Leonard [1 ]
机构：
[1] Oregon State Univ, Sch Elect Engn & Comp Sci, Corvallis, OR 97331 USA
来源：
2007 IEEE WORKSHOP ON MICROELECTRONICS AND ELECTRON DEVICES | 2007年
关键词：
random telegraph signals; rts; noise; 1/f noise; single; electron noise; sense amplifiers;
D O I：
10.1109/WMED.2007.368839
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The modeling of noise in the frequency domain gives the mean square noise current of a transistor as a function of frequency. RTS in nanoscale devices is easiest modeled as an instantaneous fluctuation in threshold voltage due to the capture and emission of traps. The capture and emission of a single electron at an interface or oxide trap in a nanoscale NMOS transistor is equivalent to a discrete change in threshold voltage. There is a small-finite probability of a large threshold voltage change due the collective capture or emission of multiple active traps. Even in wide devices this noise can contribute a mismatch in sense amplifiers in CMOS integrated circuits which can lead to errors.
引用
收藏
页码：21 / 22
页数：2
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