First principles study of effect of 3D transition metal-doped zinc oxide on gas sensitivity

被引:0
|
作者
Qiu, Zhiyong [1 ]
Murakami, Ri-Ichi [1 ]
机构
[1] Univ Tokushima, Dept Mech Engn, Tokushima 7708506, Japan
来源
MODERN PHYSICS LETTERS B | 2007年 / 21卷 / 24期
关键词
ZnO; semiconductor; thin films; surface structure; first principles;
D O I
10.1142/S0217984907014061
中图分类号
O59 [应用物理学];
学科分类号
摘要
Two series models were developed in order to investigate the gas sensitivity of 3d transition metal-doped zinc oxide (ZnO) materials. Software based on a discrete variation method (DVM) within the framework of density functional theory was used to calculate the electronic structures of the models. It was possible to determine gas sensitivity using the calculated results, from which a relationship between electronic properties and gas sensitivity was formed. The results showed that doping the transition metals greatly affected the gas sensitivity of ZnO-based materials. The main effect was attributed to the change in carrier concentration. On the contrary, the doping of transition metals had a negligible effect on the mobility of ZnO-based materials. Titanium or iron doped-ZnO is thus expected to have the best gas sensitivity of all of the 3d transition metal-doped ZnO materials.
引用
收藏
页码:1585 / 1592
页数:8
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