Highly Soluble Heteroheptacene: A New Building Block for p-Type Semiconducting Polymers

被引:26
|
作者
Zheng, Qingdong [1 ]
Chen, Shanci [1 ]
Zhang, Bo [2 ]
Wang, Lixin [1 ]
Tang, Changquan [1 ]
Katz, Howard E. [2 ]
机构
[1] Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China
[2] Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA
关键词
FIELD-EFFECT TRANSISTORS; SOLAR-CELLS; CONJUGATED POLYMERS; HIGH-PERFORMANCE; PHOTOVOLTAIC PROPERTIES; ABSORPTION; COPOLYMERS; COMPONENTS;
D O I
10.1021/ol102806x
中图分类号
O62 [有机化学];
学科分类号
070303 ; 081704 ;
摘要
A facial synthetic route to a new heteroheptacene with the inclusion of carbazole and thiophene units is described. The synthesis of two new semiconducting copolymers with use of the heteroheptacene unit is also reported. The introduction of heteroatoms (sulfur, nitrogen) in the fused-ring system leads to small optical band-gaps of these polymers. The charge carrier mobilities for these polymers are measured in ambient conditions which are sufficient for photovoltaic applications.
引用
收藏
页码:324 / 327
页数:4
相关论文
共 50 条
  • [21] Modeling of hydrocarbon sensors based on p-type semiconducting perovskites
    Sahner, K.
    Moos, R.
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2007, 9 (05) : 635 - 642
  • [22] Synthesis of a p-Type Semiconducting Phenothiazine Exfoliatable Layered Crystal
    Lee, Minkyung
    Park, Ji Eun
    Park, Chibeom
    Choi, Hee Cheul
    LANGMUIR, 2013, 29 (32) : 9967 - 9971
  • [23] p-Type semiconducting α,ω-dihexylsexithiophene for an organic thin film transistor
    Kwon, Jae-Hong
    Seo, Jung-Hoon
    Kang, Hochul
    Choi, Dong Hoon
    Ju, Byeong-Kwon
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (06)
  • [24] Photovoltage Generation at p-Type Semiconducting Polymer/Electrolyte Interfaces
    Bondi, Luca
    Tullii, Gabriele
    Fraboni, Beatrice
    Antognazza, Maria Rosa
    Cramer, Tobias
    ACS APPLIED ELECTRONIC MATERIALS, 2024, 6 (10) : 7124 - 7134
  • [25] P-TYPE SEMICONDUCTING STRUCTURES IN DIAMOND IMPLANTED WITH BORON IONS
    DENISENKO, AV
    MELNIKOV, AA
    ZAITSEV, AM
    KURGANSKII, VI
    SHILOV, AJ
    GORBAN, JP
    VARICHENKO, VS
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 11 (1-4): : 273 - 277
  • [26] p-type semiconducting α,ω-dihexylsexithiophene for an organic thin film transistor
    Kwon, Jae-Hong
    Seo, Jung-Hoon
    Kang, Hochul
    Choi, Dong Hoon
    Ju, Byeong-Kwon
    Journal of Applied Physics, 2007, 101 (06):
  • [27] CATALYSIS OF REDUCTION PROCESSES AT ILLUMINATED P-TYPE SEMICONDUCTING PHOTOELECTRODES
    BRADLEY, MG
    BOOKBINDER, DC
    FISCHER, AB
    BOCARSLY, AB
    LEWIS, NS
    WRIGHTON, MS
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1979, (SEP): : 118 - 118
  • [28] Modelling of Gas Sensitivity for P-type Semiconducting Thin Films
    Jaaniso, Raivo
    Kaerkkaenen, Irina
    Floren, Aare
    2010 IEEE SENSORS, 2010, : 1509 - 1512
  • [29] ELECTROLUMINESCENCE (EL) FROM NATURAL SEMICONDUCTING (P-TYPE) DIAMOND
    LEPEK, A
    HALPERIN, A
    JOURNAL OF LUMINESCENCE, 1977, 15 (04) : 405 - 419
  • [30] New model for piezoresistive properties of highly doped p-type polysilicon
    Spoutai, SV
    Chun, HG
    EUROSENSORS XII, VOLS 1 AND 2, 1998, : 1187 - 1189