Fabrication of an array of single-electron transistors for a scanning probe microscope sensor

被引：3

作者：

Weber, Jochen ^{[1
]}

Weis, Juergen ^{[1
]}

Hauser, Maik ^{[1
]}

Von Klitzing, Klaus ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

NANOTECHNOLOGY | 2008年 / 19卷 / 37期

关键词：

Gallium arsenide - Single electron transistors - Aluminum gallium arsenide - III-V semiconductors;

D O I：

10.1088/0957-4484/19/37/375301

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A technique for the fabrication of single-electron transistors (SETs) on tips for use in scanning probe microscopy is presented. The tips are micromachined out of an MBE-grown AlGaAs-GaAs heterostructure with a trench within each tip. The SETs are produced by aluminum evaporation and oxidation, and natural shadowing by the trench is used to separate the source and drain electrodes. By separating adjacent tips also by trenches, the concept allows the fabrication of tip arrays for parallel probing.

引用

页数：4

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