Study on the Oxide Trap Distribution in a Thin Gate Oxide from Random Telegraph Noise in the Drain Current and the Gate Leakage Current

被引：2

作者：

Cho, Heung-Jae ^{[1
]}

Son, Younghwan ^{[1
]}

Lee, Sanghoon ^{[1
]}

Lee, Jong-Ho ^{[1
]}

Park, Byung-Gook ^{[1
]}

Shin, Hyungcheol ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2011年 / 58卷 / 05期

关键词：

RTN; I-g RTN; I-d RTN; Oxide trap distribution; Trap location; Trap energy level; I-G-RTN; EXTRACTION; DEFECTS;

D O I：

10.3938/jkps.58.1518

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Random telegraph noise in the drain current (I-d RTN) and the gate current (I-g RTN) has been studied to characterize slow oxide traps in a thin gate oxide. First, I-g RTN was classified into two categories from its dependence on gate bias. Through the analysis of I-d and I-g RTNs, the distribution of oxide traps in the thin oxide was also studied. Most of the oxide traps obtained from I-d RTN were found to be in the middle range of the oxide and to have an energy level within a narrow range whereas the oxide traps from I-g RTN were widely distributed.

引用

页码：1518 / 1521

页数：4

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