Lateral profiling of interface traps and oxide charge in MOSFET devices:: Charge pumping versus DCIV

被引：11
|
作者：
Melik-Martirosian, A [1 ]
Ma, TP [1 ]
机构：
[1] Yale Univ, Ctr Microelect Mat & Struct, New Haven, CT 06520 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 10期
关键词：
charge-pumping; DCIV technique; flash memory; interface-trap density; MOS; oxide-charge density;
D O I：
10.1109/16.954469
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An improved oxide-charge and interface-trap lateral profiling charge pumping technique (iLPCP) is described. Erase-induced oxide charge and interface traps are investigated in Flash EPROM devices. It is shown that the improved technique allows the extraction of profiles in cases where the previous method does not yield satisfactory results. A comparative study of iLPCP and of an existing direct current (DCIV) technique for lateral profiling of interface traps is conducted: both erase- and program-induced interface traps are investigated in Flash EPROM devices. The results indicate that 1) iLPCP probes a much bigger portion of the gate region; 2) iLPCP probes a wider energy range; 3) DCIV is more sensitive deep in the channel and thus complements iLPCP.
引用
收藏
页码：2303 / 2309
页数：7
相关论文
共 50 条
  • [31] Threshold-voltage model of MOSFET devices with localized interface charge
    Natl Chiao-Tung Univ, Hsin-Chu, Taiwan
    IEEE Trans Electron Devices, 3 (441-447):
  • [32] Characterization of Interface and Oxide Traps in Ge pMOSFETs based on DCIV Technique
    Maji, Debabrata
    Crupi, F.
    Magnone, P.
    Giusi, G.
    Pace, C.
    Simoen, E.
    Rao, V. Ramgopal
    2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY, 2009, : 153 - +
  • [33] LATERAL NONUNIFORMITIES (LNU) OF OXIDE AND INTERFACE STATE CHARGE
    MASERJIAN, J
    ZAMANI, N
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 459 - 459
  • [34] WHY IS OXIDE-TRAP CHARGE-PUMPING (OTCP) METHOD APPROPRIATE FOR EXTRACTING THE RADIATION-INDUCED TRAPS IN MOSFET?
    Djezzar, Boualem
    Tahi, Hakim
    Mokrani, Arezki
    2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2, 2009, : 779 - 784
  • [35] On the tunneling component of charge pumping current in ultrathin gate oxide MOSFET's
    Masson, P
    Autran, JL
    Brini, J
    IEEE ELECTRON DEVICE LETTERS, 1999, 20 (02) : 92 - 94
  • [36] Advanced Energetic and Lateral Sensitive Charge Pumping Profiling Methods for MOSFET Device Characterization-Analytical Discussion and Case Studies
    Aichinger, Thomas
    Nelhiebel, Michael
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2008, 8 (03) : 509 - 518
  • [37] Reliable extraction of interface states from charge pumping method in ultra-thin gate oxide MOSFET's
    Lai, HC
    Zous, NK
    Tsai, WJ
    Lu, TC
    Wang, TH
    King, YC
    Pan, S
    ICMTS 2003: PROCEEDINGS OF THE 2003 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 2003, : 99 - 102
  • [38] Unified approach to profiling the lateral distributions of both oxide charge and interface states in n-MOSFET's under various bias stress conditions
    Natl Chiao Tung Univ, Hsinchu, Taiwan
    IEEE Trans Electron Devices, 11 (1908-1914):
  • [39] A unified approach to profiling the lateral distributions of both oxide charge and interface states in n-MOSFET's under various bias stress conditions
    Cheng, SM
    Yih, CM
    Yeh, JC
    Kuo, SN
    Chung, SS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (11) : 1908 - 1914
  • [40] A three-level charge pumping model for submicronic MOSFET interface defaults simulation
    Sellami, M
    Bouchemat, M
    Kahouadji, M
    Djahl, F
    PROCEEDINGS OF THE 2004 IEEE INTERNATIONAL CONFERENCE ON SOLID DIELECTRICS, VOLS 1 AND 2, 2004, : 395 - 397
12345