Electronic and magnetic properties of Heusler alloy Co2MnSi epitaxial ultrathin films facing a MgO barrier studied by x-ray magnetic circular dichroism

被引：13
|
作者：
Saito, Toshiaki [1 ,2 ]
Katayama, Toshikazu [1 ]
Emura, Ai [1 ]
Sumida, Noa [1 ]
Matsuoka, Nanae [1 ]
Ishikawa, Takayuki [3 ]
Uemura, Tetsuya [3 ]
Yamamoto, Masafumi [3 ]
Asakura, Daisuke [4 ]
Koide, Tsuneharu [4 ]
机构：
[1] Toho Univ, Fac Sci, Dept Phys, Chiba 2748510, Japan
[2] Toho Univ, Res Mat Integrated Properties, Chiba 2748510, Japan
[3] Hokkaido Univ, Div Elect Informat, Sapporo, Hokkaido 0600814, Japan
[4] High Energy Accelerator Res Org, IMSS, Photon Factory, Tsukuba, Ibaraki 3050801, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 07期
关键词：
D O I：
10.1063/1.2836676
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electronic and magnetic states of an epitaxially grown full-Heusler alloy Co2MnSi (CMS) 1.1 nm (4 ML) thick ultrathin film and a CMS 50-nm-thick film both facing an epitaxial MgO(001) tunnel barrier were element-specifically studied by means of x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD). The observed XAS and XMCD spectra revealed that both the CMS films were not oxidized. The Co and Mn spin magnetic moments for the 4 ML thick CMS film obtained by applying the sum rules were close to those for the 50-nm-thick one and the theoretical values for bulk CMS with the L2(1) structure. These results indicate that 4 ML thick CMS ultrathin films facing a MgO barrier still retain the electronic and magnetic states for the L2(1) structure. (C) 2008 American Institute of Physics.
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页数：3
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