Electronic and magnetic properties of Heusler alloy Co2MnSi epitaxial ultrathin films facing a MgO barrier studied by x-ray magnetic circular dichroism

被引：13

作者：

Saito, Toshiaki ^{[1
,2
]}

Katayama, Toshikazu ^{[1
]}

Emura, Ai ^{[1
]}

Sumida, Noa ^{[1
]}

Matsuoka, Nanae ^{[1
]}

Ishikawa, Takayuki ^{[3
]}

Uemura, Tetsuya ^{[3
]}

Yamamoto, Masafumi ^{[3
]}

Asakura, Daisuke ^{[4
]}

Koide, Tsuneharu ^{[4
]}

机构：

[1] Toho Univ, Fac Sci, Dept Phys, Chiba 2748510, Japan

[2] Toho Univ, Res Mat Integrated Properties, Chiba 2748510, Japan

[3] Hokkaido Univ, Div Elect Informat, Sapporo, Hokkaido 0600814, Japan

[4] High Energy Accelerator Res Org, IMSS, Photon Factory, Tsukuba, Ibaraki 3050801, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 07期

关键词：

D O I：

10.1063/1.2836676

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic and magnetic states of an epitaxially grown full-Heusler alloy Co2MnSi (CMS) 1.1 nm (4 ML) thick ultrathin film and a CMS 50-nm-thick film both facing an epitaxial MgO(001) tunnel barrier were element-specifically studied by means of x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD). The observed XAS and XMCD spectra revealed that both the CMS films were not oxidized. The Co and Mn spin magnetic moments for the 4 ML thick CMS film obtained by applying the sum rules were close to those for the 50-nm-thick one and the theoretical values for bulk CMS with the L2(1) structure. These results indicate that 4 ML thick CMS ultrathin films facing a MgO barrier still retain the electronic and magnetic states for the L2(1) structure. (C) 2008 American Institute of Physics.

引用

页数：3

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