AFM characterization of PbTe quantum dots grown by molecular beam epitaxy under Volmer-Weber mode

被引:22
|
作者
Ferreira, SO
Neves, BRA
Magalhaes-Paniago, R [1 ]
Malachias, A
Rappl, PHO
Ueta, AY
Abramof, E
Andrade, MS
机构
[1] Univ Fed Minas Gerais, Dept Fis, BR-30161 Belo Horizonte, MG, Brazil
[2] Univ Fed Vicosa, Dept Fis, Vicosa, MG, Brazil
[3] Inst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, San Jose Dos Campos, SP, Brazil
[4] CETEC, Fundacao Ctr Tecnol Minas Gerais, Belo Horizonte, MG, Brazil
基金
巴西圣保罗研究基金会;
关键词
atomic force microscopy; nanostructures; molecular beam epitaxy; tellurites; semiconducting lead compounds;
D O I
10.1016/S0022-0248(01)01421-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
PbTe quantum dots (QD) were fabricated on BaF2(1 1 1) substrates by molecular beam epitaxy under Volmer-Weber (V-W) growth mode. The morphological aspects of the samples were characterized using atomic force microscopy-AFM. In contrast to other reports dealing with QD grown under V-W mode, the uniformity of size distribution is comparable to that obtained for QD systems grown under Stransky-Krastanov mode. Furthermore, the observed QD density is consistent, at comparable surface coverages and growth temperatures. with previously reported values for other QD systems. Also, as growth proceeds, an increase in both material incorporation efficiency and in QD aspect ratio have been observed. Finally, the highest aspect ratio islands are found to be faceted, indicating possible changes in QD morphology as more material is incorporated into them. These results show that the V-W growth mode can be successfully used to obtain self-assembled quantum dots. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:121 / 128
页数:8
相关论文
共 50 条
  • [31] Surfactant effect of Sb on GaInAs quantum dots grown by molecular beam epitaxy
    Matsuura, T
    Miyamoto, T
    Kageyama, T
    Ohta, M
    Matsui, Y
    Furuhata, T
    Koyama, F
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (5A): : L605 - L607
  • [32] Surfactant effect of Sb on GaInAs quantum dots grown by molecular beam epitaxy
    Matsuura, Tetsuya
    Miyamoto, Tomoyuki
    Kageyama, Takeo
    Ohta, Masataka
    Matsui, Yasutaka
    Furuhata, Tatsuya
    Koyama, Fumio
    1600, Japan Society of Applied Physics (43):
  • [33] PbTe/CdTe single quantum wells grown on GaAs (100) substrates by molecular beam epitaxy
    Koike, K
    Honden, T
    Makabe, I
    Yan, FP
    Yano, M
    JOURNAL OF CRYSTAL GROWTH, 2003, 257 (1-2) : 212 - 217
  • [34] Optical characterization of InAs quantum dots fabricated by molecular beam epitaxy
    Saitoh, T
    Takeuchi, H
    Konda, J
    Yoh, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B): : 1217 - 1220
  • [35] GaN quantum dots by molecular beam epitaxy
    Daudin, B
    Adelmann, C
    Gogneau, N
    Sarigiannidou, E
    Monroy, E
    Fossard, F
    Rouvière, JL
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4): : 540 - 545
  • [36] Volmer-Weber InAs quantum dot formation on InP (113)B substrates under the surfactant effect of Sb
    Zhao, Yu
    Mauger, Samuel J. C.
    Bertru, Nicolas
    Folliot, Herve
    Rohel, Tony
    Koenraad, Paul M.
    APPLIED PHYSICS LETTERS, 2014, 105 (03)
  • [37] Carrier capture and relaxation of self-assembled ZnTe/ZnSe quantum dots prepared under Volmer-Weber and Stranski-Krastanow growth modes
    Lee, ME
    Yeh, YC
    Chung, YH
    Wu, CL
    Yang, CS
    Chou, WC
    Kuo, CT
    Jang, DJ
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 26 (1-4): : 422 - 426
  • [38] Dislocation reduction with quantum dots in GaN grown on sapphire substrates by molecular beam epitaxy
    Smith, DJ
    Huang, D
    Reshchikov, MA
    Yun, F
    King, T
    Morkoc, H
    Litton, CW
    MATERIALS AND DEVICES FOR OPTOELECTRONICS AND MICROPHOTONICS, 2002, 722 : 33 - 38
  • [39] Optical properties of CdSe quantum dots grown on ZnSe and ZnBeSe by molecular beam epitaxy
    X. Zhou
    M. C. Tamargo
    S. P. Guo
    Y. C. Chen
    Journal of Electronic Materials, 2003, 32 : 733 - 736
  • [40] Correlation effects in wave function mapping of molecular beam epitaxy grown quantum dots
    Maruccio, Giuseppe
    Janson, Martin
    Schramm, Andreas
    Meyer, Christian
    Matsui, Tomohiro
    Heyn, Christian
    Hansen, Wolfgang
    Wiesendanger, Roland
    Rontani, Massimo
    Molinari, Elisa
    NANO LETTERS, 2007, 7 (09) : 2701 - 2706