Theoretical analysis of diffused quantum-well lasers and optical amplifiers

被引:6
|
作者
Choy, WCH
Chan, KS
机构
[1] Fujitsu Compound Semicond, San Jose, CA USA
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
关键词
diffused quantum well (DFQW); distributed feedback (DFB) lasers; optical amplifiers; polarization independence; quantum-well interdiffusion; quantum-well intermixing; wavelength tuning;
D O I
10.1109/JSTQE.2003.818842
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Diffused quantum-well (QW) distributed feedback (DFB) lasers and optical amplifiers will be theoretically analyzed in this paper. For DFB lasers, a design rule will be proposed and the validity of the design rule will be discussed with respect to changes in the injected carrier density. The range of grating period, which can be used in the design, is discussed. As a consequence, the maximum tuning range of the emission wavelength can be estimated without involving the time-consuming self-consistent simulation. The features of polarization independence of optical amplifiers achieved by using diffused QWs are also discussed. Our theoretical results successfully explain why polarization independence can achieve in. the long-wavelength tail of the modal gain and absorption coefficient but not at photon energies above the transition edge. This explanation applies to other tensile-strained QWs for polarization-independent applications. The understanding is crucial for optimizing polarization-independent devices. To conclude, our analysis of the diffused QW optical devices demonstrates that QW intermixing technology is a practical candidate for not only realizing monolithic photonic integrated circuit, but also enhancing optical device performance.
引用
收藏
页码:698 / 707
页数:10
相关论文
共 50 条
  • [41] RESONANT INJECTION QUANTUM-WELL LASERS
    SCHULMAN, JN
    APPLIED PHYSICS LETTERS, 1986, 49 (12) : 690 - 692
  • [42] CARRIER DISTRIBUTION IN QUANTUM-WELL LASERS
    EVANS, PA
    BLOOD, P
    ROBERTS, JS
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (09) : 1740 - 1743
  • [43] GAIN SPECTRA OF QUANTUM-WELL LASERS
    BURT, MG
    ELECTRONICS LETTERS, 1983, 19 (06) : 210 - 211
  • [44] NONEQUILIBRIUM EFFECTS IN QUANTUM-WELL LASERS
    TESSLER, N
    NAGAR, R
    EISENSTEIN, G
    CHANDRASEKHAR, S
    JOYNER, CH
    DENTAI, AG
    KOREN, U
    RAYBON, G
    APPLIED PHYSICS LETTERS, 1992, 61 (20) : 2383 - 2385
  • [45] IMPEDANCE CHARACTERISTICS OF QUANTUM-WELL LASERS
    WEISSER, S
    ESQUIVIAS, I
    TASKER, PJ
    RALSTON, JD
    ROMERO, B
    ROSENZWEIG, J
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (12) : 1421 - 1423
  • [46] LINEWIDTH ENHANCEMENT IN QUANTUM-WELL LASERS
    WESTBROOK, LD
    ADAMS, MJ
    ELECTRONICS LETTERS, 1987, 23 (23) : 1223 - 1225
  • [47] Theory of non-Markovian optical gain in quantum-well lasers
    Ahn, D
    PROGRESS IN QUANTUM ELECTRONICS, 1997, 21 (03) : 249 - 287
  • [48] Optical gain in GaAsBi-based quantum-well diode lasers
    Marko, Igor P.
    Broderick, Christopher A.
    Jin, Shirong
    Ludewig, Peter
    Stolz, Wolfgang
    Volz, Kerstin
    Rorison, Judy M.
    O'Reilly, Eoin P.
    Sweeney, Stephen J.
    NOVEL IN-PLANE SEMICONDUCTOR LASERS XVI, 2017, 10123
  • [49] Modal switching in quantum-well semiconductor lasers with weak optical feedback
    Furfaro, L
    Pedaci, F
    Javaloyes, J
    Hachair, X
    Giudici, M
    Balle, S
    Tredicce, J
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2005, 41 (05) : 609 - 618
  • [50] Differential efficiency of quantum-well lasers
    Univ of Wales, Wales, United Kingdom
    IEEE Journal on Selected Topics in Quantum Electronics, 1997, 3 (02): : 491 - 498