The mechanism of formation, growth and transformation of microdefects in dislocation-free monocrystals of silicon

被引：1

作者：

Talanin, VI ^{[1
]}

机构：

[1] Zaporozhye State Engn Acad, UA-330114 Zaporozhe, Ukraine

来源：

SIBERIAN RUSSIAN STUDENT WORKSHOPS AND TUTORIALS ON ELECTRON DEVICES AND MATERIALS | 2000年

关键词：

D O I：

10.1109/SREDM.2000.888561

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：87 / 90

页数：4

共 50 条

[31] CORRELATION BETWEEN ELECTROPHYSICAL PARAMETERS AND STRUCTURE MICRODEFECTS OF DISLOCATION-FREE SILICON-CRYSTALS
VORONKOV, VV
VORONKOVA, GI
TYURINA, NB
KRISTALLOGRAFIYA, 1994, 39 (06): : 1112 - 1114
[32] A DISLOCATION-FREE MECHANISM OF GROWTH OF REAL CRYSTALS
DISTLER, GI
ZVYAGIN, BB
NATURE, 1966, 212 (5064) : 807 - &
[33] FORMATION OF VACANCY AGGLOMERATES IN QUENCHED DISLOCATION-FREE SILICON
TEMPELHOFF, K
VANSUNG, N
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 72 (02): : 617 - 622
[34] GROWTH OF DISLOCATION-FREE BULK SILICON-CRYSTALS
BAGAI, RK
BORLE, WN
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1983, 6 (01): : 25 - 46
[35] MICRODEFECTS AND STRIATIONS IN DISLOCATION-FREE LEC-GAP CRYSTALS
DEKOCK, AJR
VANDEWIJGERT, WM
HENGST, JHT
ROKSNOER, PJ
HUYBREGTS, JMPL
JOURNAL OF CRYSTAL GROWTH, 1977, 41 (01) : 13 - 28
[36] EFFECT OF REACTOR NEUTRON-IRRADIATION AND HEAT-TREATMENT ON MICRODEFECTS IN DISLOCATION-FREE SILICON
GRESKOV, IM
SOLOVEV, SP
KHARCHENKO, VA
INORGANIC MATERIALS, 1980, 16 (07) : 777 - 780
[37] MICRODEFECTS IN DISLOCATION-FREE LIQUID-ENCAPSULATED CZOCHRALSKI GAAS
YAMADA, K
OSAKA, J
JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2609 - 2614
[38] GROWTH OF DISLOCATION-FREE SILICON-CRYSTALS FROM A PEDESTAL
MAKEEV, KI
TUROVSKII, BM
KHLEBNIKOV, VG
VIGDOROVICH, VN
INORGANIC MATERIALS, 1988, 24 (09) : 1344 - 1346
[39] GROWTH OF DEFECT LOOPS IN DISLOCATION-FREE SILICON SINGLE CRYSTALS
ZARIFYAN.ZA
MILEVSKI.LS
SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1971, 16 (03): : 493 - &
[40] Physical model of paths of microdefects nucleation in dislocation-free single crystals float-zone silicon
Talanin, VI
Talanin, IE
Levinson, DI
CRYSTAL RESEARCH AND TECHNOLOGY, 2002, 37 (09) : 983 - 1010

← 1 2 3 4 5 →