Characterization of bulk and surface properties in semiconductors using non-contacting techniques.

被引：0
|
作者：
Castaldini, A [1 ]
Cavalcoli, D [1 ]
Cavallini, A [1 ]
Rossi, M [1 ]
机构：
[1] INFM, I-40127 Bologna, Italy
来源：
ANALYTICAL AND DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS, DEVICES, AND PROCESSES | 2003年 / 2003卷 / 03期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Scanning Kelvin Probe (SKP) and Surface Photovoltage (SPV) methods have been implemented in a single toot in order to get information on surface, as well as on bulk, electronic properties of crystalline Si wafers. The two combined methods allow for the measurements in non contact and non destructive way of three parameters: minority carrier diffusion length, majority carrier distribution in the near-surface region and work function difference over the whole wafer area. Examples of the application of these methods to the characterization of crystalline wafers will be presented.
引用
收藏
页码：346 / 354
页数：9
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