Investigation on Hot-carrier-induced Degradation for the n-type Lateral DMOS with Floating p-top Layer

被引：0

作者：

Sun, Weifeng ^{[1
]}

Zhang, Chunwei ^{[1
]}

Liu, Siyang ^{[1
]}

Su, Wei ^{[2
]}

Zhang, Aijun ^{[2
]}

Wang, Shaorong ^{[2
]}

Ma, Shulang ^{[2
]}

Huang, Yu ^{[2
]}

机构：

[1] Southeast Univ, Natl ASIC Syst Engn Res Ctr, Nanjing, Jiangsu, Peoples R China

[2] CSMC Technol Corp, Wuxi, Peoples R China

来源：

2014 IEEE 26TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD) | 2014年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The hot-carrier-induced degradation for the n-type lateral DMOS (nLDMOS) with floating p-top layer has been experimentally investigated for the first time. Our experiments show that the degradation of the linear drain current (I-dlin) has a strange shift at the beginning of the stress. The studies demonstrate that the strange shift comes from the unexpected depletion of the p-top layer. Moreover, it is noted that the corrected saturation drain current (I-dsat) degradation has a turnover at stressing 100s while the degradation of Idlin has not. Further studies illustrate that the different degradation phenomenon comes from different influence mechanisms of generated interface states and injected hot holes on the Idlin and I-dsat for their different current distributions.

引用

页码：394 / 397

页数：4

共 50 条

[21] Two-stage hot-carrier-induced degradation of p-type LDMOS transistors
Chen, Jone F.
Chen, Tzu-Hsiang
Ai, Deng-Ren
ELECTRONICS LETTERS, 2014, 50 (23) : 1751 - 1752
[22] Effect of gate voltage on hot-carrier-induced on-resistance degradation in high-voltage n-type lateral diffused metal-oxide-semiconductor transistors
Chen, Shiang-Yu
Chen, Jone F.
Wu, Kuo-Ming
Lee, J. R.
Liu, C. A.
Hsu, S. L.
JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) : 2645 - 2649
[23] Hot-Carrier-Induced Forward and Reverse Saturation Current Degradations for the n-Type Symmetric EDMOS Transistor
Sun, Weifeng
Zhang, Chunwei
Liu, Siyang
Huang, Tingting
Yu, Chaohui
Su, Wei
Zhang, Aijun
Liu, Yuwei
He, Xiaowei
Wu, Xingwen
IEEE ELECTRON DEVICE LETTERS, 2014, 35 (07) : 690 - 692
[24] Effect of hot-carrier-induced interface states distribution on linear drain current degradation in 0.35 μm n-type lateral diffused metal-oxide-semiconductor transistors
Lee, J. R.
Chen, Jone F.
Wu, Kuo-Ming
Liu, C. M.
Hsu, S. L.
APPLIED PHYSICS LETTERS, 2008, 92 (10)
[25] Breakdown voltage walkout resulting from hot-carrier-induced interface states in n-type LDMOS transistors
Chen, J. F.
Feng, Y. -S.
ELECTRONICS LETTERS, 2016, 52 (17) : 1488 - 1489
[26] Investigation on Hot-Carrier-Induced degradation of LDMOS transistor fabricated in logic CMOS process
Zheng, Huixiong
Wu, Huaqiang
Wang, Bin
2014 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2014,
[27] Hot-carrier-induced current capability degradation and optimization for lateral IGBT on thick SOI substrate
Zhang, Chunwei
Li, Yang
Yue, Wenjing
Fu, Xiaoqian
Li, Zhiming
SOLID-STATE ELECTRONICS, 2018, 145 : 34 - 39
[28] Analysis of hot-carrier-induced degradation and snapback in submicron 50V lateral MOS transistors
Ludikhuize, AW
Slotboom, M
Nezar, A
Nowlin, N
Brock, R
ISPSD '97: 1997 IEEE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, 1997, : 53 - 56
[29] An investigation of drain pulse induced hot carrier degradation in n-type low temperature polycrystalline silicon thin film transistors
Zhang, Meng
Wang, Mingxiang
MICROELECTRONICS RELIABILITY, 2010, 50 (05) : 713 - 716
[30] Investigation of Hot-Carrier-Induced Degradation Mechanisms in p-Type High-Voltage Drain Extended Metal-Oxide-Semiconductor Transistors
Chen, Jone F.
Chen, Shiang-Yu
Wu, Kuo-Ming
Liu, C. M.
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)

← 1 2 3 4 5 →