Tin catalyzed silicon nanowires prepared by magnetron sputtering

被引：2

作者：

Liu, Jian ^{[1
]}

Huang, Shi-Hua ^{[1
]}

Chen, Li-Ping ^{[1
]}

He, Lv ^{[1
]}

机构：

[1] Zhejiang Normal Univ, Dept Phys, Jinhua 321004, Zhejiang, Peoples R China

来源：

MATERIALS LETTERS | 2015年 / 151卷

基金：

中国国家自然科学基金;

关键词：

Magnetron sputtering; Silicon nanowire; Sn catalyst; VLS growth mechanism; GROWTH;

D O I：

10.1016/j.matlet.2015.03.065

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tin (Sn) catalyzed silicon nanowires (Si NWs) were grown by the method of magnetron sputtering at temperatures ranging from 250 to 400 degrees C. As the growth temperature increases from 250 to 400 degrees C, the length and density of Si NWs first increases and then decreases. A mixed phase of amorphous and nanocrystalline silicon exists in the synthesized Si NWs, and the crystallization degree of Si NWs increases rapidly with further increase in growth temperature. Sn nanoparticles on the top of Si NWs can be observed, which indicates that the vapor-liquid-solid (VLS) growth mechanism is responsible for Si NWs growth. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：122 / 125

页数：4

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