Strong alignment of self-assembling InP quantum dots

被引：27
|
作者：
Hausler, K
Eberl, K
Noll, F
Trampert, A
机构：
[1] Max-Planck-Institut für Festkörperforschung
来源：
PHYSICAL REVIEW B | 1996年 / 54卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.54.4913
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on a mechanism for ordering of self-assembling InP quantum dots which are prepared by molecular-beam epitaxy on a strained In0.61Ga0.39P buffer layer on (001) GaAs. A pronounced alignment of InP nanoscale clusters is observed along the [110] directions. This phenomenon is attributed to the diffusion of surface adatoms driven by the stress of misfit dislocations confined at the In0.61Ga0.39P/GaAs interface.
引用
收藏
页码：4913 / 4918
页数：6
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