Low-damage sputtering of GaAs and GaP using size-selected Ar cluster ion beams

被引：11
|
作者：
Nagano, M
Yamada, S
Akita, S
Houzumi, S
Toyoda, N
Yamada, I
机构：
[1] CRIEPI, Mat Sci Res Lab, Tokyo 2018511, Japan
[2] Univ Hyogo, Lab Adv Sci & Technol Ind, Ako, Hyogo 6781205, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 1-7期
关键词：
GCIB; CL; GaAs; GaP; sputtering yield; irradiation damage depth; low damage;
D O I：
10.1143/JJAP.44.L164
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the irradiation damage depths produced by an Ar gas cluster ion beam (GCIB) and an Ar monomer ion beam (MIB) on GaAs and Gap, in a comparison of the cathode luminescence (CL) spectra of ion-irradiated and nonirradiated areas. The depths of irradiation damage in both substrates were estimated from the relationship between the CL intensity and the electron beam acceleration voltage.
引用
收藏
页码：L164 / L166
页数：3
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