Bulk crystal growth of antimonide based III-V compounds for TPV applications

被引：0

作者：

Dutta, PS ^{[1
]}

Ostrogorsky, AG ^{[1
]}

Gutmann, RJ ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Ctr Integrated Elect & Elect Mfg, Dept Mech Engn Aeronaut Engn & Mech, Troy, NY 12180 USA

来源：

THERMOPHOTOVOLTAIC GENERATION OF ELECTRICITY: FOURTH NREL CONFERENCE | 1999年 / 460卷

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper, the bulk growth of crack-free GaInSb and single phase GaInAsSb alloys are presented. A new class of III-V quasi-binary semiconductor alloys [A(III)B(V)](1-x)[CIIIDV](x) has been synthesized and bulk crystals grown from the melt for the first time. The present investigation is focused on the quasi-binary alloy (GaSb)(1-x)(InAs)(x) (0<x<0.05) due to its importance for thermophotovoltaic applications. The structural properties of this melt-grown quasi-binary alloy are found to be significantly different from the conventional quaternary compound Ga1-xInxAsySb1-y with composition x = y. Synthesis and growth procedures are discussed. For the growth of ternary alloys, it was demonstrated that forced convection or mixing in the melt during directional solidification of InxGa1-xSb (0<x<0.1) significantly reduces cracks in the crystals.

引用

页码：227 / 236

页数：10

共 50 条

[21] GROWTH EFFECTS IN THE HETEROEPITAXY OF III-V COMPOUNDS.
Olsen, G.H.
Ettenberg, M.
Proceedings of the Society of Photo-Optical Instrumentation Engineers, 1978, 2 : 1 - 56
[22] Modeling the CVD growth kinetics of III-V compounds
Mimila-Arroyo, J
Reyes, JD
MODERN PHYSICS LETTERS B, 2001, 15 (17-19): : 647 - 650
[23] Epitaxial ternary and quaternary III-V antimonide substrates
Mauk, MG
Cox, JA
Sulima, OV
Datta, S
Tata, AN
IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS, 2002, : 213 - 222
[24] Thermodynamic analysis for crystal growth of the III-V compound
Yamaguchi, K
Takeda, Y
SECOND INTERNATIONAL CONFERENCE ON PROCESSING MATERIALS FOR PROPERTIES, 2000, : 209 - 212
[25] HOT CARRIER TRANSIENT RESPONSE IN BULK III-V COMPOUNDS.
Moore, J.Scott
Das, P.
1600, (56):
[26] Manganese-based magnetic compounds grown on III-V semiconductors: Growth technique, magnetic properties, and applications
Akinaga, H
Miyanishi, S
Asamitsu, A
Van Roy, W
Kuo, LH
Tomioka, Y
De Boeck, J
Borghs, G
ASDAM'98, SECOND INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, CONFERENCE PROCEEDINGS, 1998, : 145 - 154
[27] Performance modeling of III-V antimonide-based barrier infrared detectors
Kopytko, Malgorzata
Gomolka, Emilia
Manyk, Tetjana
Martyniuk, Piotr
Rutkowski, Jaroslaw
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXVIII, 2020, 11274
[28] STOICHIOMETRY OF III-V COMPOUNDS
NISHIZAWA, J
OYAMA, Y
MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1994, 12 (6-8): : 273 - 426
[29] STOICHIOMETRY OF III-V COMPOUNDS
NISHIZAWA, J
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 21 (2-3): : 107 - 119
[30] ATOMIC LAYER EPITAXY OF III-V COMPOUNDS - CHEMISTRY AND APPLICATIONS
USUI, A
PROCEEDINGS OF THE IEEE, 1992, 80 (10) : 1641 - 1653

← 1 2 3 4 5 →