Q-enhanced 1.9GHz tuned CMOS RF amplifier

被引：0
|
作者：
AbouAllam, E
Manku, T
ElMasry, EI
机构：
来源：
ELECTRONICS LETTERS | 1996年 / 32卷 / 05期
关键词：
CMOS integrated circuits; amplifiers; radiofrequency amplifiers;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors present a CMOS integrated bandpass amplifier tuned at 1.9GHz and suitable for highly integrated RF receivers, Tuning is achieved using on-chip integrated inductors. The amplifier includes quality factor enhancement circuitry to enhance the low Q of these integrated inductors. Simulation using HSPICE indicates a gain exceeding 20dB with a quality factor of 20.
引用
收藏
页码：448 / 449
页数：2
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