Effects of absorption coefficients and intermediate-band filling in InAs/GaAs quantum dot solar cells

被引：41
|
作者：
Hu, W. G. [1 ]
Inoue, T. [2 ]
Kojima, O. [1 ,2 ]
Kita, T. [1 ,2 ]
机构：
[1] Kobe Univ, CREATE, Kobe, Hyogo 6578501, Japan
[2] Kobe Univ, Grad Sch Engn, Kobe, Hyogo 6578501, Japan
来源：
APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 19期
关键词：
Absorption co-efficient - Detailed balance - High conversion efficiency - Intermediate bands - Optimum value - Quantum dot solar cells - Shape and size - Subband gap absorption;
D O I：
10.1063/1.3516468
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of absorption coefficients were incorporated in a detailed balance model to analyze the intermediate-band (IB) configuration in quantum dot (QD) solar cells. Our results show that the optimum IB level, EIB, depends on the ratio of two subbandgap absorption coefficient constants, alpha(IC0)/alpha(VI0). Efficiency contour plots have been calculated to determine the optimum values of EIB and alpha(IC0)/alpha(VI0). In many cases, a large alpha(IC0) results in high conversion efficiency, especially for thin QD solar cells. Optimizing QD shape and size is a promising method to increase alpha(IC0). Increasing the QD total thickness partially addresses the urgent demand for a large alpha(IC0). (C) 2010 American Institute of Physics. [doi:10.1063/1.3516468]
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页数：3
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