Current-Nonlinear Hall Effect and Spin-Orbit Torque Magnetization Switching in a Magnetic Topological Insulator

被引：124
|
作者：
Yasuda, K. [1 ,2 ]
Tsukazaki, A. [3 ]
Yoshimi, R. [4 ]
Kondou, K. [4 ]
Takahashi, K. S. [4 ,5 ]
Otani, Y. [4 ,6 ]
Kawasaki, M. [1 ,2 ,4 ]
Tokura, Y. [1 ,2 ,4 ]
机构：
[1] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan
[2] Univ Tokyo, QPEC, Tokyo 1138656, Japan
[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[4] RIKEN, CEMS, Wako, Saitama 3510198, Japan
[5] Japan Sci & Technol Agcy JST, PRESTO, Chiyoda Ku, Tokyo 1020075, Japan
[6] Univ Tokyo, ISSP, Kashiwa, Chiba 2778581, Japan
来源：
PHYSICAL REVIEW LETTERS | 2017年 / 119卷 / 13期
基金：
日本学术振兴会;
关键词：
SURFACE-STATES; DOMAIN-WALLS;
D O I：
10.1103/PhysRevLett.119.137204
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The current-nonlinear Hall effect or second harmonic Hall voltage is widely used as one of the methods for estimating charge-spin conversion efficiency, which is attributed to the magnetization oscillation by spin-orbit torque (SOT). Here, we argue the second harmonic Hall voltage under a large in-plane magnetic field with an in-plane magnetization configuration in magnetic-nonmagnetic topological insulator (TI) heterostructures, Cr-x(Bi1-ySby)(2-x)Te-3/(Bi1-ySby)(2)Te-3, where it is clearly shown that the large second harmonic voltage is governed not by SOT but mainly by asymmetric magnon scattering without macroscopic magnetization oscillation. Thus, this method does not allow an accurate estimation of charge-spin conversion efficiency in TI. Instead, the SOT contribution is exemplified by current pulse induced nonvolatile magnetization switching, which is realized with a current density of 2.5 x 10(10) Am-2, showing its potential as a spintronic material.
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页数：5
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