Solution-processed, low voltage tantalum-based memristive switches

被引：7
|
作者：
Sophocleous, Marios [1 ]
Mohammadian, Navid [2 ]
Majewski, Leszek A. [2 ]
Georgiou, Julius [1 ]
机构：
[1] Univ Cyprus, EMPHASIS Res Ctr, Dept Elect & Comp Engn, Holist Elect Res Lab, Nicosia, Cyprus
[2] Univ Manchester, Dept Elect & Elect Engn, Manchester M13 9PL, Lancs, England
来源：
MATERIALS LETTERS | 2020年 / 269卷
关键词：
Memristors; Memristive switches; Anodization; Tantalum; Tantalum-oxide;
D O I：
10.1016/j.matlet.2020.127676
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this letter, preliminary results showing the memristive behavior of tantalum/tantalum oxide/platinum devices on glass substrates are reported. The ultra-thin (d < 10 nm) tantalum oxide films were obtained using solution-based anodic oxidation (anodization) of Ta in citric acid. The devices were tested using standard ReRAM characterization tests from +/- 0.5 V to +/- 5 V and showed a promising memristive behavior. The memristive switches show an almost 80-times change in resistance between the ON and OFF states. (C) 2020 Elsevier B.V. All rights reserved.
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页数：3
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