Oxide removal from GaN(0001) surfaces

被引：13

作者：

Schulz, Ch ^{[1
]}

Schmidt, Th ^{[1
]}

Flege, J. I. ^{[1
]}

Berner, N. ^{[1
]}

Tessarek, Ch ^{[1
]}

Hommel, D. ^{[1
]}

Falta, J. ^{[1
]}

机构：

[1] Univ Bremen, Inst Solid State Phys, D-28359 Bremen, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 | 2009年 / 6卷

关键词：

GAN; PHOTOEMISSION;

D O I：

10.1002/pssc.200880845

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

X-ray photoelectron spectroscopy has been used to study two different two-step cleaning methods of MOVPE grown GaN(0001). Carbon and oxygen were identified as the major contaminants, even though the samples were stored in a glove box after growth and transferred under nitrogen atmosphere. By thermal annealing of the samples a significant oxygen decrease and a complete removal of the carbon was achieved. To remove the residual oxygen, subsequently Ga deposition/re-desorption cycles and N-plasma treatment were performed. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：S305 / S308

页数：4

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