Lateral force microscopy investigations of the crystallization of SrBi2Ta2O9 thin films

被引:3
|
作者
Lee, KB [1 ]
Ju, BK
机构
[1] Sangji Univ, Dept Phys, Kangwondo 220702, South Korea
[2] Korea Inst Sci & Technol, Elect Mat & Devices Res Ctr, Seoul 130650, South Korea
关键词
SrBi2Ta2O9 thin film; crystallization; lateral force microscopy; X-ray diffraction;
D O I
10.1016/S0040-6090(98)01118-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A lateral force microscope (LFM) was used for studying the surface morphologies of SrBi2Ta2O9 thin films with varying post-annealing temperature. Specimens were prepared onto platinized silicon wafers by the sol-gel method and post-annealed at 600-800 degrees C. Non-ferroelectric matrix phases were found for specimens annealed below 700 degrees C, which were confirmed by the measurement of X-ray diffraction (XRD) patterns. The friction coefficients between the surface of ferroelectric grain and non-ferroelectric matrix, and the silicon nitride tip, were determined from the line profile of the LFM images. The measured coefficients of friction for a tip on grain and matrix are 0.19 +/- 0.08 and 0.28 +/- 0.08, respectively. In the LFM images, the matrix phases decreased with increasing post-anneal temperature and the surfaces of the specimens annealed above 700 degrees C were filled with SET grains which were consistent with the XRD results. Ferroelectricities of these specimens were confirmed by the measurement of polarization held hysteresis loops. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:65 / 70
页数:6
相关论文
共 50 条
  • [31] Environmentally safe synthesis of SrBi2Ta2O9 and SrBi2Nb2O9 thin films
    González-Aguilar, G
    Elisabete, M
    Costa, V
    Salvado, IMM
    JOURNAL DE PHYSIQUE IV, 2005, 128 : 41 - 44
  • [32] Epitaxy of (106)-oriented SrBi2Ta2O9 and SrBi2Nb2O9 thin films
    Nagahama, T
    Manabe, T
    Yamaguchi, I
    Kumagai, T
    Tsuchiya, T
    Mizuta, S
    THIN SOLID FILMS, 1999, 353 (1-2) : 52 - 55
  • [33] Structural characterization of SrBi2Ta2O9 thin
    ChingPrado, E
    Perez, W
    ReynesFigueroa, A
    Katiyar, RS
    Ravichandran, D
    Bhalla, AS
    EPITAXIAL OXIDE THIN FILMS III, 1997, 474 : 49 - 54
  • [34] Interdiffusion phenomena in SrBi2Ta2O9 films
    Stannard, WB
    Johnston, PN
    Walker, SR
    ElBouanani, M
    Bubb, IF
    Scott, JF
    Cohen, DD
    Dytlewski, N
    Martin, JW
    INTEGRATED FERROELECTRICS, 1997, 16 (1-4) : 159 - 164
  • [35] Domain structure study of SrBi2Ta2O9 ferroelectric thin films by scanning capacitance microscopy
    Leu, CC
    Chen, CY
    Chien, CH
    Chang, MN
    Hsu, FY
    Hu, CT
    APPLIED PHYSICS LETTERS, 2003, 82 (20) : 3493 - 3495
  • [36] Dry etching of SrBi2Ta2O9 thin films for FRAM applications
    Im, YH
    Park, JS
    Choi, RJ
    Hahn, YB
    Choi, CS
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2001, 39 : S503 - S507
  • [37] α-Axis growth of ferroelectric SrBi2Ta2O9 thin films on silicon
    Miu, D
    Martinez, JC
    Wiehl, L
    Raitieri, R
    Adrian, H
    MATERIALS LETTERS, 2005, 59 (10) : 1243 - 1247
  • [38] Plasma chemistries for dry etching of SrBi2Ta2O9 thin films
    Park, JS
    Im, YH
    Choi, RJ
    Hahn, YB
    Choi, CS
    Lee, SH
    Lee, JK
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2001, 4 (02) : G17 - G19
  • [39] Orientation control of SrBi2Ta2O9 epitaxial thin films and their properties
    Nagahama, T.
    Manabe, T.
    Yamaguchi, I.
    Kumagai, T.
    Tsuchiya, T.
    Mizuta, S.
    Key Engineering Materials, 1999, 169 : 139 - 144
  • [40] Origin of imprint in ferroelectric CSD SrBi2Ta2O9 thin films
    Grossmann, M
    Lohse, O
    Bolten, D
    Waser, R
    Hartner, W
    Schindler, G
    Nagel, N
    Dehm, C
    FERROELECTRIC THIN FILMS VII, 1999, 541 : 269 - 274