High-κ dielectric ε-Ga2O3 stabilized in a transparent heteroepitaxial structure grown by mist CVD at atmospheric pressure

The dielectric constant of metastable epsilon-Ga2O3 was evaluated for the first time by using a transparent heteroepitaxial structure of epsilon-Ga2O3/indium tin oxide/yttria-stabilized zirconia. The dielectric epsilon-Ga2O3 layer was grown by the facile solution route of mist chemical vapor deposition at atmospheric pressure. The highest dielectric constant of nearly 32 (at an AC frequency of 10 kHz) was about three times larger than that of the most stable beta-Ga2O3 phase. This high dielectric constant is attributed to the polar structure of epsilon-Ga2O3 unlike beta-Ga2O3, and is comparable to those of the so-called high-kappa dielectric oxides. The combination of a wide bandgap and a high dielectric constant would be beneficial for the future development of optoelectrical devices.