Photoinduced p-Type Conductivity in n-Type ZnO

被引：2
|
作者：
Zhao, W. X. [1 ]
Sun, B. [1 ]
Shen, Z. [1 ]
Liu, Y. H. [1 ]
Chen, P. [1 ]
机构：
[1] Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2015年 / 44卷 / 03期
关键词：
n-Type ZnO; photoinduced p-type conductivity; light illumination; capacitance-voltage curves; LIGHT-EMITTING-DIODES; ZINC-OXIDE; FILMS; FABRICATION; SEMICONDUCTORS; HYDROGEN; GA;
D O I：
10.1007/s11664-014-3608-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ag/[BaTiO3/gamma-Fe2O3]/ZnO composite films were grown on an n-type silicon (100) single-crystal substrate by magnetron sputtering, and annealed at various temperatures. Capacitance-voltage (C-V) curves show that the capacitance gradually increases with increasing annealed temperature. In addition, ZnO exhibits n-type conductivity in the dark but p-type conductivity under incandescent lamp illumination. The photoinduced p-type conductivity in n-type ZnO should be related to a special n-type ZnO layer originating from high-temperature annealing. The current-voltage (I-V) curves of the [BaTiO3/gamma-Fe2O3]/ZnO thin films display a strong photoconductivity effect.
引用
收藏
页码：1003 / 1007
页数：5
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